* High Current Gain
* Monolithic Constructor Absolute Maximum Ratings (Ta=25°C)
* Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 40 W
* Maximum Volta
HBD678
Hi-Sincerity Mocroelectronics
22.84 KB
Npn epitaxial planar transistor.
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6625-A Issued Date : 1994.10.04 Revised Date : 2000.10.01 Page No. : 1/2
HBD678
NPN EPITAXIAL PLAN.
📁 Related Datasheet
HBD675 - NPN EPITAXIAL PLANAR TRANSISTOR
(Hi-Sincerity Mocroelectronics)
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6619-C Issued Date : 1994.07.22 Revised Date : 2000.10.01 Page No. : 1/3
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HBD677 - NPN EPITAXIAL PLANAR TRANSISTOR
(Hi-Sincerity Mocroelectronics)
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HBD677
NPN EPITAXIAL PLAN.
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(888) IPD-CONVerters q (888) 473-2668 q .ipdconverters.
HBD SERIES - DUAL OUTPUT, 60 WATT
DESCRIPTION HBD dual output, DC/DC converters feature.
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