HBD678, HBD678_Hi Datasheet - Hi-Sincerity Mocroelectronics

HBD678 - NPN EPITAXIAL PLANAR TRANSISTOR

HBD678 Features

* High Current Gain

* Monolithic Constructor Absolute Maximum Ratings (Ta=25°C)

* Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum

* Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 40 W

* Maximum Volta

Datasheet Details

HBD678, HBD678_Hi

Hi-Sincerity Mocroelectronics

22.84 KB

Npn epitaxial planar transistor.

This datasheet PDF includes multiple part numbers: HBD678, HBD678_Hi.
Please refer to the document for exact specifications by model.

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