HBD678, HBD678_Hi NPN EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: HE6625-A Issued Date : 1994.10.04 Revised Date : 2000.10.01 Page No.: 1/2 HBD678 NPN EPITAXIAL PLAN.
The HBD678 is designed for use as output devices in complementary general purpose amplifier applications. High Current Gain.

📥 Download Datasheet

HBD678 Datasheet Preview — This datasheet PDF includes multiple part numbers: HBD678, HBD678_Hi. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: HBD678, HBD678_Hi
Manufacturer: Hi-Sincerity Mocroelectronics
File Size: 22.84 KB
Datasheet: HBD678_Hi-SincerityMocroelectronics.pdf
Description: NPN EPITAXIAL PLANAR TRANSISTOR
Note: This datasheet PDF includes multiple part numbers: HBD678, HBD678_Hi.
Please refer to the document for exact specifications by model.

Features

* High Current Gain
* Monolithic Constructor Absolute Maximum Ratings (Ta=25°C)
* Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 40 W
* Maximum Volta

HBD678 Distributors

📁 Related Datasheet

HBD HBD-DZ170 HBD-DZ171 HBD-DZ175 HBD-DZ310 HBD-DZ340M

📌 All Tags

HBD678_Hi NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

Hi-Sincerity Mocroelectronics HBD678-like datasheet