HBD678 - NPN EPITAXIAL PLANAR TRANSISTOR
HBD678 Features
* High Current Gain
* Monolithic Constructor Absolute Maximum Ratings (Ta=25°C)
* Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 40 W
* Maximum Volta