* High Current Gain
* Monolithic Constructor Absolute Maximum Ratings (Ta=25°C)
* Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 40 W
* Maximum Volta
HBD678
Hi-Sincerity Mocroelectronics
22.84 KB
Npn epitaxial planar transistor.
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6625-A Issued Date : 1994.10.04 Revised Date : 2000.10.01 Page No. : 1/2 HBD678 NPN EPITAXIAL PLAN.
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