HBD677 Datasheet - Hi-Sincerity Mocroelectronics

NPN EPITAXIAL PLANAR TRANSISTOR

HBD677 General Description

The HBD677 is designed for use as output devices in complementary general purpose amplifier applications. Absolute Maximum Ratings (Ta=25°C) * Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum * Maximum Power Dissipation Total Power Dissip.

HBD677 Datasheet (30.23 KB)

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HBD677

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Hi-Sincerity Mocroelectronics

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30.23 KB

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Npn epitaxial planar transistor.
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6620-B Issued Date : 1994.07.22 Revised Date : 2000.10.01 Page No. : 1/3 HBD677 NPN EPITAXIAL PLAN.

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HBD677 General Description

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