HBD677, HBD677_Hi NPN EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: HE6620-B Issued Date : 1994.07.22 Revised Date : 2000.10.01 Page No.: 1/3 HBD677 NPN EPITAXIAL PLAN.
The HBD677 is designed for use as output devices in complementary general purpose amplifier applications.

📥 Download Datasheet

HBD677 Datasheet Preview — This datasheet PDF includes multiple part numbers: HBD677, HBD677_Hi. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: HBD677, HBD677_Hi
Manufacturer: Hi-Sincerity Mocroelectronics
File Size: 30.23 KB
Datasheet: HBD677_Hi-SincerityMocroelectronics.pdf
Description: NPN EPITAXIAL PLANAR TRANSISTOR
Note: This datasheet PDF includes multiple part numbers: HBD677, HBD677_Hi.
Please refer to the document for exact specifications by model.

Applications

* Absolute Maximum Ratings (Ta=25°C)
* Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 20 W
* Maximum Voltages and Currents BVCBO Collector to Base Voltage 60 V BVCEO

HBD677 Distributors

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HBD677_Hi NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

Hi-Sincerity Mocroelectronics HBD677-like datasheet