HBD677, HBD677_Hi Datasheet - Hi-Sincerity Mocroelectronics

HBD677 - NPN EPITAXIAL PLANAR TRANSISTOR

The HBD677 is designed for use as output devices in complementary general purpose amplifier applications.

Absolute Maximum Ratings (Ta=25°C) * Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum * Maximum Power Dissipation Total Power Dissip

HBD677_Hi-SincerityMocroelectronics.pdf

HBD677 Datasheet Preview — This datasheet PDF includes multiple part numbers: HBD677, HBD677_Hi. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

HBD677, HBD677_Hi

Manufacturer:

Hi-Sincerity Mocroelectronics

File Size:

30.23 KB

Description:

Npn epitaxial planar transistor.

Note:

This datasheet PDF includes multiple part numbers: HBD677, HBD677_Hi.
Please refer to the document for exact specifications by model.

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📌 All Tags

HBD677_Hi NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics