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HMJE2955T, HMJE2955T_Hi PNP EPITAXIAL PLANAR TRANSISTOR

HMJE2955T Description

HI-SINCERITY MICROELECTRONICS CORP.HMJE2955T PNP EPITAXIAL PLANAR TRANSISTOR Spec.No.: HE6736 Issued Date : 1992.12.15 Revised Date : 2004.11.19 P.
The HMJE2955T is designed for general purpose of amplifier and switching applications. Maximum.

HMJE2955T Applications

* Absolute Maximum Ratings (TA=25°C) TO-220
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (TC=25°C) 75 W Total Power Dissipation (TA=25°C) 0.6 W
* M

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This datasheet PDF includes multiple part numbers: HMJE2955T, HMJE2955T_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HMJE2955T, HMJE2955T_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
47.86 KB
Datasheet
HMJE2955T_Hi-SincerityMocroelectronics.pdf
Description
PNP EPITAXIAL PLANAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: HMJE2955T, HMJE2955T_Hi.
Please refer to the document for exact specifications by model.

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PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics
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