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HMJE3055T, HMJE3055T_Hi Datasheet - Hi-Sincerity Mocroelectronics

HMJE3055T NPN EPITAXIAL PLANAR TRANSISTOR

The HMJE3055T is designed for general purpose of amplifier and switching applications. Absolute Maximum Ratings (TA=25°C) TO-220 * Maximum Temperature Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum * Maximum Power Dissipation Total Power Dissipation (TC=.

HMJE3055T_Hi-SincerityMocroelectronics.pdf

This datasheet PDF includes multiple part numbers: HMJE3055T, HMJE3055T_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

HMJE3055T, HMJE3055T_Hi

Manufacturer:

Hi-Sincerity Mocroelectronics

File Size:

41.73 KB

Description:

Npn epitaxial planar transistor.

Note:

This datasheet PDF includes multiple part numbers: HMJE3055T, HMJE3055T_Hi.
Please refer to the document for exact specifications by model.

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TAGS

HMJE3055T HMJE3055T_Hi NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

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