HMJE3055T

NPN EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

HMJE3055T General Description

The HMJE3055T is designed for general purpose of amplifier and switching applications. Absolute Maximum Ratings (TA=25°C) TO-220

* Maximum Temperature Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum

* Maximum Power Dissipation Total Power Dissipation (TC=.

HMJE3055T Datasheet (41.73 KB)

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HMJE3055T

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Hi-Sincerity Mocroelectronics

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41.73 KB

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Npn epitaxial planar transistor.
HI-SINCERITY MICROELECTRONICS CORP. HMJE3055T NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6737 Issued Date : 1993.09.24 Revised Date : 2004.11.19 P.

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HMJE3055T NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

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HMJE3055T General Description

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