HMJE3055T, HMJE3055T_Hi NPN EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

Description

HI-SINCERITY MICROELECTRONICS CORP.HMJE3055T NPN EPITAXIAL PLANAR TRANSISTOR Spec.No.: HE6737 Issued Date : 1993.09.24 Revised Date : 2004.11.19 P.
The HMJE3055T is designed for general purpose of amplifier and switching applications. Maximum.

📥 Download Datasheet

HMJE3055T Datasheet Preview — This datasheet PDF includes multiple part numbers: HMJE3055T, HMJE3055T_Hi. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: HMJE3055T, HMJE3055T_Hi
Manufacturer: Hi-Sincerity Mocroelectronics
File Size: 41.73 KB
Datasheet: HMJE3055T_Hi-SincerityMocroelectronics.pdf
Description: NPN EPITAXIAL PLANAR TRANSISTOR
Note: This datasheet PDF includes multiple part numbers: HMJE3055T, HMJE3055T_Hi.
Please refer to the document for exact specifications by model.

Applications

* Absolute Maximum Ratings (TA=25°C) TO-220
* Maximum Temperature Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (TC=25°C) 75 W Total Power Dissipation (TA=25°C) 0.6 W
* Ma

HMJE3055T Distributors

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HMJE3055T_Hi NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

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