* Charger-up time is about 1 ms faster than of a germanium transistor
* Small saturation voltage can bring less power dissipation and flashing times TO-92 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximu
HSD879
Hi-Sincerity Mocroelectronics
45.78 KB
Silicon npn epitaxial type transistor.
HI-SINCERITY MICROELECTRONICS CORP. HSD879 SILICON NPN EPITAXIAL TYPE TRANSISTOR Spec. No. : HA200207 Issued Date : 1996.07.15 Revised Date : 2005.02.
📁 Related Datasheet
HSD879D SILICON NPN EPITAXIAL TYPE TRANSISTOR (Hi-Sincerity Mocroelectronics)
HSD88 Silicon Schottky Barrier Diode (Renesas Technology)
HSD880 NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
HSD882 NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
HSD882S NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
HSD-035-125A Brushless Motor Driver (ETC)
HSD-035-60A Brushless Motor Driver (ETC)
HSD-035-60B Brushless Motor Driver (ETC)
HSD-035-85A Brushless Motor Driver (ETC)
HSD-035-85B Brushless Motor Driver (ETC)
