HSD879, HSD879_Hi - SILICON NPN EPITAXIAL TYPE TRANSISTOR

Name: HSD879
SKU: HSD879-172836

Hi-Sincerity Mocroelectronics

The HSD879 by Hi-Sincerity Mocroelectronics is a SILICON NPN EPITAXIAL TYPE TRANSISTOR. Below is the official datasheet preview.

Datasheet Details

Part number	HSD879, HSD879_Hi
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	45.78 KB
Description	SILICON NPN EPITAXIAL TYPE TRANSISTOR
Datasheet	HSD879_Hi-SincerityMocroelectronics.pdf
Note	This datasheet PDF includes multiple part numbers: HSD879, HSD879_Hi. Please refer to the document for exact specifications by model.
Additional preview pages of the HSD879 datasheet.

For 1.5V and 3v electronic flash use.

Charger-up time is about 1 ms faster than of a germanium transistor.
Small saturation voltage can bring less power dissipation and flashing times TO-92 Absolute Maximum Ratings.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (TA=25°C) 750 mW.
Maximum Voltages and Currents (TA=25°C) BVCBO Collector t.

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Published: Mar 26, 2005 |