HSD880 Datasheet - Hi-Sincerity Mocroelectronics

HSD880 NPN EPITAXIAL PLANAR TRANSISTOR

HSD880 Features

* High DC Current Gain

* High Power Dissipation: PC=30W at TC=25°C TO-220 Absolute Maximum Ratings (TA=25°C)

* Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum

* Maximum Power Dissipation Total Power Dissipation (TC=25°C)

Datasheet Details

HSD880

Hi-Sincerity Mocroelectronics

41.55 KB

Npn epitaxial planar transistor.

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