* Charger-up time is about 1 ms faster than of a germanium transistor.
* Small saturation voltage can bring less power dissipation and flashing times. TO-126ML Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C M
HSD879D
Hi-Sincerity Mocroelectronics
41.46 KB
Silicon npn epitaxial type transistor.
HI-SINCERITY MICROELECTRONICS CORP. HSD879D SILICON NPN EPITAXIAL TYPE TRANSISTOR Spec. No. : HD200203 Issued Date : 1996.07.15 Revised Date : 2006.0.
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