HSD879D Datasheet - Hi-Sincerity Mocroelectronics

HSD879D SILICON NPN EPITAXIAL TYPE TRANSISTOR

HSD879D Features

* Charger-up time is about 1 ms faster than of a germanium transistor.

* Small saturation voltage can bring less power dissipation and flashing times. TO-126ML Absolute Maximum Ratings

* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C M

Datasheet Details

HSD879D

Hi-Sincerity Mocroelectronics

41.46 KB

Silicon npn epitaxial type transistor.

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