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HJ210, HJ210_Hi PNP EPITAXIAL PLANAR TRANSISTOR

HJ210 Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: HE6011-B Issued Date : 1996.03.12 Revised Date : 2000.11.01 Page No.: 1/2 HJ210 PNP EPITAXIAL PLANA.
The HJ210 is designed for low voltage, low-power, high-gain audio amplifier applications. Maximum Temper.

HJ210 Applications

* Absolute Maximum Ratings (Ta=25°C)
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C
* Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 12.5 W
* Maximum Voltages and Currents BVCBO Collector to Base Voltage -40 V BVCEO Coll

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This datasheet PDF includes multiple part numbers: HJ210, HJ210_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HJ210, HJ210_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
23.32 KB
Datasheet
HJ210_Hi-SincerityMocroelectronics.pdf
Description
PNP EPITAXIAL PLANAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: HJ210, HJ210_Hi.
Please refer to the document for exact specifications by model.

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PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics HJ210-like datasheet