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HJ6718, HJ6718_Hi NPN EPITAXIAL PLANAR TRANSISTOR

HJ6718 Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: HE6830-A Issued Date : 1994.01.25 Revised Date : 2000.11.01 Page No.: 1/2 HJ6718 NPN EPITAXIAL PLAN.
The HJ6718 is designed for general purpose medium power amplifier and switching . High power: 1. High current: 1A Abs.

HJ6718 Features

* High power: 1.2W
* High current: 1A Absolute Maximum Ratings (Ta=25°C)
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C
* Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 20 W
* Maximum Voltages and Current

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This datasheet PDF includes multiple part numbers: HJ6718, HJ6718_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HJ6718, HJ6718_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
22.68 KB
Datasheet
HJ6718_Hi-SincerityMocroelectronics.pdf
Description
NPN EPITAXIAL PLANAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: HJ6718, HJ6718_Hi.
Please refer to the document for exact specifications by model.

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NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics HJ6718-like datasheet