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2SH17 Silicon N-Channel IGBT

2SH17 Description

ADE *208 *290 (Z) 2SH17 Silicon N-Channel IGBT 1st.Edition Feb.1995 Application TO *220AB High speed power switching .
be subject to change without notice.

2SH17 Features

* 2
* High speed switching
* Low on saturation voltage 1 1 3 2 3 1. Gate 2. Collector 3. Emitter Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collectorl dissipation Channel temperatur

2SH17 Applications

* be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before usi

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Datasheet Details

Part number
2SH17
Manufacturer
Hitachi Semiconductor
File Size
41.30 KB
Datasheet
2SH17_HitachiSemiconductor.pdf
Description
Silicon N-Channel IGBT

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Silicon N-Channel IGBT Hitachi Semiconductor
Hitachi Semiconductor 2SH17-like datasheet