Datasheet4U Logo Datasheet4U.com

2SH21 - SILICON P EMITTER PLANAR TYPE TRANSISTOR

Download the 2SH21 datasheet PDF. This datasheet also covers the 2SH20 variant, as both devices belong to the same silicon p emitter planar type transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High Oscillation Output Voltage : V0B1 =3V (Min. ).
  • Low Emitter Reverse Current : I EC =0.1yA (Max. ).
  • Wide Oscillation Area : Ip=3.5yA (Max. ) (2SH20) IV=6mA (Min. ) Unit in mm 05.8UAX. 04.95MAX. gfe-5^.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SH20-Toshiba.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2SH21
Manufacturer Toshiba
File Size 141.70 KB
Description SILICON P EMITTER PLANAR TYPE TRANSISTOR
Datasheet download datasheet 2SH21 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SH21 N-Channel MOSFET Hitachi Semiconductor
2SH20 Silicon N-Channel IGBT Hitachi Semiconductor
2SH22 N-Channel MOSFET Hitachi Semiconductor
2SH26 N-Channel MOSFET Hitachi Semiconductor
2SH27 N-Channel MOSFET Hitachi Semiconductor

Other Datasheets by Toshiba

Part Number Description
2SH20 SILICON P EMITTER PLANAR TYPE TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SILICON P EMITTER PLANAR TYPE (INDUSTRIAL APPLICATIONS) 2SH20 2SH21 RELAXATION OSCILLATOR, SCR TRIGGER AND TIMER APPLICATIONS. FEATURES • High Oscillation Output Voltage : V0B1 =3V (Min.) • Low Emitter Reverse Current : I EC =0.1yA (Max.) • Wide Oscillation Area : Ip=3.5yA (Max. ) (2SH20) IV=6mA (Min.) Unit in mm 05.8UAX. 04.95MAX. gfe-5^ MAXIMUM RATINGS (Ta=25°C) CHARACTERISTICS Base 2 - Base 1 Voltage Base 1 - Emitter Voltage Base 2 - Emitter Voltage Peak Emitter Current Emitter Current Allowable Power Dissipation Junction Temperature Storage Temperature Range SYMBOL V 32B10 VB1EO RATING 55 60 Vb2EO 60 lE(peak) 1 IE 50 P 250 T J Tstg 150 -65^150 UNIT V V V A mA mW °C °C 1. BASE 1 2. EMITTER 3. BASE 2 (CASE) TO — 1? — — TC 7 , T'B 8C Weight : 1.