2SH18 - Silicon N-Channel IGBT

Hitachi Semiconductor

The 2SH18 by Hitachi Semiconductor is a Silicon N-Channel IGBT. Below is the official datasheet preview.

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2SH18 Silicon N-Channel IGBT by Hitachi Semiconductor - Datasheet Preview — Official preview page of the **2SH18** Silicon N-Channel IGBT datasheet (Hitachi Semiconductor).

Datasheet Details

Part number	2SH18
Manufacturer	Hitachi Semiconductor
File Size	43.18 KB
Description	Silicon N-Channel IGBT
Datasheet	2SH18_HitachiSemiconductor.pdf
Additional preview pages of the 2SH18 datasheet.

2SH18 Product details

Description

Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document.

Features

High speed switching.
Low on saturation voltage 1 2 1 3 2 3 1. Gate 2. Collector 3. Emitter Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Channel temperature Storage temperature Symbol VCES Ratings 600 ±20 18 30 60 150.
55 to +150 Unit V V A A W °C °C.

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Published: Mar 30, 2005 |