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2SH18 Silicon N-Channel IGBT

2SH18 Description

ADE *208 *291 (Z) 2SH18 Silicon N-Channel IGBT 1st.Edition Feb.1995 Application High speed power switching TO *220AB .
Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use.

2SH18 Features

* High speed switching
* Low on saturation voltage 1 2 1 3 2 3 1. Gate 2. Collector 3. Emitter Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Channel temperature

2SH18 Applications

* Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have

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Datasheet Details

Part number
2SH18
Manufacturer
Hitachi Semiconductor
File Size
43.18 KB
Datasheet
2SH18_HitachiSemiconductor.pdf
Description
Silicon N-Channel IGBT

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Silicon N-Channel IGBT Hitachi Semiconductor
Hitachi Semiconductor 2SH18-like datasheet