2SH18 Silicon N-Channel IGBT

Hitachi Semiconductor

Description

ADE *208 *291 (Z) 2SH18 Silicon N-Channel IGBT 1st.Edition Feb.1995 Application High speed power switching TO *220AB .
Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use.

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Datasheet Specifications

Part number: 2SH18
Manufacturer: Hitachi Semiconductor
File Size: 43.18 KB
Datasheet: 2SH18_HitachiSemiconductor.pdf
Description: Silicon N-Channel IGBT

Features

* High speed switching
* Low on saturation voltage 1 2 1 3 2 3 1. Gate 2. Collector 3. Emitter Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Channel temperature

Applications

* Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have

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