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2SH19 Silicon N-Channel IGBT

2SH19 Description

ADE *208 *292 (Z) 2SH19 Silicon N-Channel IGBT 1st.Edition Feb.1995 Application TO *220AB High speed power switching .
ears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the in.

2SH19 Features

* High speed switching
* Low on saturation voltage 1 2 1 3 2 3 1. Gate 2. Collector 3. Emitter Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Channel temperature

2SH19 Applications

* ears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received t

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Datasheet Details

Part number
2SH19
Manufacturer
Hitachi Semiconductor
File Size
43.09 KB
Datasheet
2SH19_HitachiSemiconductor.pdf
Description
Silicon N-Channel IGBT

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Silicon N-Channel IGBT Hitachi Semiconductor
Hitachi Semiconductor 2SH19-like datasheet