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2SJ245 - Silicon P-Channel MOS FET

Hitachi Semiconductor

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Datasheet Details

Part number	2SJ245
Manufacturer	Hitachi Semiconductor
File Size	54.09 KB
Description	Silicon P-Channel MOS FET
Datasheet	2SJ245_HitachiSemiconductor.pdf

2SJ245 Product details

Features

Low on-resistance.
High speed switching.
Low drive current.
4 V gate drive device can be driven from 5 V source.
Suitable for switching regulator, DC-DC converter Outline DPAK-1 4 4 1 23 D 12 3 1. Gate G 2. Drain 3. Source 4. Drain S November 1996 2SJ245(L), 2SJ245(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel.

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Other Datasheets by Hitachi Semiconductor

2SJ245L - Silicon P-Channel MOS FET
2SJ244 - P-Channel MOSFET
2SJ246 - SILICON P-CHANNEL MOS FET
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2SJ248 - P-Channel MOSFET
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Published: Sep 27, 2006 |