2SJ245, Hitachi Semiconductor
2SJ245(L), 2SJ245(S)
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive.
2SJ245S, Hitachi Semiconductor
2SJ245(L), 2SJ245(S)
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive.
2SJ243, NEC
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ243
P-CHANNEL MOS FET FOR SWITCHING
The 2SJ243 is a P-channel vertical type MOS FET that is driven at 2.5.
2SJ244, Hitachi Semiconductor
2SJ244
Silicon P-Channel MOS FET
Application
High speed power switching Low voltage operation
Features
• Very Low on-resistance • High speed switchi.
2SJ244, Renesas
2SJ244
Silicon P Channel MOS FET
Description
High speed power switching Low voltage operation
REJ03G0853-0200 (Previous: ADE-208-1187)
Rev.2.00 Sep 0.
2SJ246, Hitachi Semiconductor
..
2SJ246 L , 2SJ246 S
SILICON P-CHANNEL MOS FET
Application
DPAK–1
High speed power switching
4
4
Features
12 3 12 3
• • • •
.