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2SJ200 Datasheet - Toshiba Semiconductor

2SJ200, P-Channel MOSFET

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application High breakdown voltage : VDSS = *180 V z.
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2SJ200_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SJ200

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

294.58 KB

Description:

P-Channel MOSFET

Applications

* including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or a

2SJ200 Distributors

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