Datasheet4U Logo Datasheet4U.com

2SJ200 - P-Channel MOSFET

📥 Download Datasheet

Datasheet preview – 2SJ200

Datasheet Details

Part number 2SJ200
Manufacturer Toshiba Semiconductor
File Size 294.58 KB
Description P-Channel MOSFET
Datasheet download datasheet 2SJ200 Datasheet
Additional preview pages of the 2SJ200 datasheet.

📁 Similar Datasheet

  • 2SJ202 - P-Channel MOSFET (NEC)
  • 2SJ203 - MOS FIELD EFFECT TRANSISTOR (NEC)
  • 2SJ203 - MOS Fied Effect Transistor (Guangdong Kexin Industrial)
  • 2SJ204 - P-Channel MOSFET (NEC)
  • 2SJ204 - P-Channel MOSFET (Kexin)
  • 2SJ204 - P-Channel Logic Level MOSFET (Freescale)
  • 2SJ205 - P-Channel MOSFET (NEC)
  • 2SJ206 - P-Channel MOSFET (NEC)
  • 2SJ206 - P-Channel MOSFET (Kexin)
  • 2SJ207 - P-Channel MOSFET (NEC)
Other Datasheets by Toshiba Semiconductor

Full PDF Text Transcription

Click to expand full text
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application High breakdown voltage : VDSS = −180 V z High forward transfer admittance : |Yfs| = 4.0 S (typ.) z Complementary to 2SK1529 2SJ200 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Gate−source voltage Drain current (Note 1) Drain power dissipation (Tc = 25°C) Channel temperature Storage temperature range VDSS VGSS ID PD Tch Tstg −180 V ±20 V −10 A 120 W 150 °C −55~150 °C 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE JEDEC ― JEITA ― TOSHIBA 2-16C1B Weight: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g.
Published: |