Datasheet Specifications
- Part number
- 2SJ200
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 294.58 KB
- Datasheet
- 2SJ200_ToshibaSemiconductor.pdf
- Description
- P-Channel MOSFET
Description
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application High breakdown voltage : VDSS = *180 V z.
Applications
* including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or a2SJ200 Distributors
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