2SJ200 Datasheet - Toshiba Semiconductor

2SJ200 P-Channel MOSFET

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application High breakdown voltage : VDSS = 180 V z High forward transfer admittance : |Yfs| = 4.0 S (typ.) z Complementary to 2SK1529 2SJ200 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain source voltage Gate source voltage Drain current (Note 1) Drain power dissipation (Tc = 25°C) Channel temperature Storage temperature range V.

2SJ200_ToshibaSemiconductor.pdf