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TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
2SJ107
For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications
2SJ107
Unit: mm
• High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V) • Low RDS (ON): RDS (ON) = 40 Ω (typ.) • Small package
• Complementary to 2SK366
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range
VGDS IG PD Tj Tstg
25 −10 200 125 −55~125
V mA mW °C °C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEDEC
―
temperature, etc.
2SJ107 Datasheet
