2SK2570 - Silicon N-Channel MOSFET

Hitachi Semiconductor

Datasheet Details

Part number	2SK2570
Manufacturer	Hitachi Semiconductor
File Size	40.07 KB
Description	Silicon N-Channel MOSFET
Datasheet	2SK2570_HitachiSemiconductor.pdf

Low on-resistance R DS(on) = 0. 8 Ω typ. (VGS = 4 V, I D = 100 mA).
2.5V gate drive devices.
Small package (MPAK) Outline MPAK 3 1 2 D G 1. Source 2. Gate 3. Drain S 2SK2570 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % Symbol VDSS VGSS ID I D(pulse).
Pch Tch Tstg 1 Ratings 20 ±10 0.2 0.

📁 2SK2570 Similar Datasheet

Other Datasheets by Hitachi Semiconductor

Published: Mar 30, 2005 |