2SK2929 - Silicon N Channel MOS FET

Name: 2SK2929
SKU: 2SK2929-203309

Hitachi Semiconductor

The 2SK2929 by Hitachi Semiconductor is a Silicon N Channel MOS FET. Below is the official datasheet preview.

Datasheet Details

Part number	2SK2929
Manufacturer	Hitachi Semiconductor
File Size	52.68 KB
Description	Silicon N Channel MOS FET
Datasheet	2SK2929_HitachiSemiconductor.pdf
Additional preview pages of the 2SK2929 datasheet.

Low on-resistance R DS =0.026 Ω typ.
High speed switching.
4V gate drive device can be driven from 5V source Outline TO.
220AB D G 1 2 S 3 1. Gate 2. Drain(Flange 3. Source 2SK2929 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VG.

📁 2SK2929 Similar Datasheet

2SK2920 - Silicon N-Channel MOS Type Field Effect Transistor (Toshiba Semiconductor)
2SK2927 - N-Channel MOSFET (INCHANGE)
2SK2928 - N-Channel MOSFET (Renesas)
2SK2900-01 - N-channel MOS-FET (Fuji Electric)
2SK2901-01L - N-CHANNEL SILICON POWER MOS-FET (Fuji Electric)
2SK2901-01S - N-CHANNEL SILICON POWER MOS-FET (Fuji Electric)
2SK2902-01MR - N-CHANNEL SILICON POWER MOS-FET (Fuji Electric)
2SK2903-01MR - N-CHANNEL SILICON POWER MOS-FET (Fuji Electric)

Other Datasheets by Hitachi Semiconductor

Published: Mar 30, 2005 |