2SK2940L - Silicon N Channel MOS FET

Hitachi Semiconductor

Datasheet Details

Part number	2SK2940L
Manufacturer	Hitachi Semiconductor
File Size	55.33 KB
Description	Silicon N Channel MOS FET
Datasheet	2SK2940L_HitachiSemiconductor.pdf

Low on-resistance R DS =0.010 Ω typ.
High speed switching.
4V gate drive device can be driven from 5V source Outline LDPAK 4 4 D 1 G 1 2 3 2 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK2940(L),2SK2940(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Not.

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Published: Mar 30, 2005 |