2SK359 Datasheet (Hitachi Semiconductor)

2SK359, N-Channel MOSFET

2SK359 Silicon N-Channel MOS FET Application VHF amplifier Outline TO-92 (2) 1.

Gate 2.

Source 3.

Drain 3 2 1 2SK359 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Gate current Channel power dissipation Channel temperature Storage temperature Note: 1.

VGS = 4 V Symbol VDSX VGSS ID IG Pch Tch Tstg 1 Ratings 20 ±5 30 ±1 400 150 55 to +150 Unit V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain t