2SK359 Datasheet - Hitachi Semiconductor

2SK359 N-Channel MOSFET

2SK359 Silicon N-Channel MOS FET Application VHF amplifier Outline TO-92 (2) 1. Gate 2. Source 3. Drain 3 2 1 2SK359 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Gate current Channel power dissipation Channel temperature Storage temperature Note: 1. VGS = 4 V Symbol VDSX VGSS ID IG Pch Tch Tstg 1 Ratings 20 ±5 30 ±1 400 150 55 to +150 Unit V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain t.

2SK359_HitachiSemiconductor.pdf