4AJ11 Datasheet - Hitachi Semiconductor

4AJ11 Silicon P-Channel Power MOS FET Array

4AJ11 Features

* Low on-resistance R DS(on) 0.13 , VGS =

* 10 V, I D =

* 4 A R DS(on) 0.17 , VGS =

* 4 V, I D =

* 4 A

* Capable of 4 V gate drive

* Low drive current

* High speed switching

* High density mounting

* Suitable for motor drive

Datasheet Details

4AJ11

Hitachi Semiconductor

35.59 KB

Silicon p-channel power mos fet array.

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