4AJ11 Silicon P-Channel Power MOS FET Array

Hitachi Semiconductor

4AJ11 Description

4AJ11 Silicon P-Channel Power MOS FET Array Application High speed power switching .

4AJ11 Features

* Low on-resistance R DS(on) 0.13 , VGS =
* 10 V, I D =
* 4 A R DS(on) 0.17 , VGS =
* 4 V, I D =
* 4 A
* Capable of 4 V gate drive
* Low drive current
* High speed switching
* High density mounting
* Suitable for motor drive

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Datasheet Details

Part number: 4AJ11
Manufacturer: Hitachi Semiconductor
File Size: 35.59 KB
Datasheet: 4AJ11_HitachiSemiconductor.pdf
Description: Silicon P-Channel Power MOS FET Array

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Silicon P-Channel Power MOS FET Array Hitachi Semiconductor

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