4AM11 Silicon N-Channel/P-Channel Power MOS FET Array

Hitachi Semiconductor

Description

4AM11 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching .

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Datasheet Specifications

Part number: 4AM11
Manufacturer: Hitachi Semiconductor
File Size: 125.20 KB
Datasheet: 4AM11_HitachiSemiconductor.pdf
Description: Silicon N-Channel/P-Channel Power MOS FET Array

Features

* Low on-resistance N-channel: RDS(on) ≤ 0.17 Ω, VGS = 10 V, ID = 2.5 A P-channel: RDS(on) ≤ 0.2 Ω, VGS =
* 10 V, ID =
* 2.5 A
* Capable of 4 V gate drive Low drive current High speed switching High density mounting Suitable for H

Applications

* based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropr

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4AM11 Silicon N-Channel P-Channel Power MOS FET Array Hitachi Semiconductor

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