Part number:
4AM11
Manufacturer:
Hitachi Semiconductor
File Size:
125.20 KB
Description:
Silicon n-channel/p-channel power mos fet array
| Image | Manufacturer | B2B MPN | Description | Distributor | Stock | Quantity | Price | Buy Now |
|---|---|---|---|---|---|---|---|---|
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TE Connectivity | 44AM1111-16-9-9CS2275 | HOOK-UP DL STRND 16AWG WHT FEET | DigiKey | 920 | 100 units |
$2.45
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4AM11
Hitachi Semiconductor
125.20 KB
Silicon n-channel/p-channel power mos fet array
* Low on-resistance N-channel: RDS(on) ≤ 0.17 Ω, VGS = 10 V, ID = 2.5 A P-channel: RDS(on) ≤ 0.2 Ω, VGS =
* 10 V, ID =
* 2.5 A
* Capable of 4 V gate drive Low drive current High speed switching High density mounting Suitable for H
📁 Related Datasheet
4AM13 - Silicon N-Channel/P-Channel Power MOS FET Array
(Hitachi Semiconductor)
4AM13
Silicon N-Channel/P-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance N-channel: RDS(on) ≤ 0.4 Ω.
4AM15 - Silicon N-Channel/P-Channel Power MOS FET Array
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4AM15
Silicon N-Channel/P-Channel Power MOS FET Array
Application
High speed power switching
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• Low on-resistance N Channel: RDS(on) ≤ 0.5 Ω.
4AM16 - Silicon N-Channel/P-Channel Power MOS FET Array
(Hitachi Semiconductor)
4AM16
Silicon N-Channel/P-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance N Channel: RDS(on) ≤ 0.17 .
4AM17 - Silicon N/P-Channel/P-Channel Power MOS FET Array
(Hitachi Semiconductor)
4AM17
Silicon N/P Channel MOS FET High Speed Power Switching
ADE-208-729 (Z) 1st. Edition February 1999 Features
• Low on-resistance N Channel: R DS(.
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4A1-4A10
Plastic Silicon Rectifiers
VOLTAGE RANGE: 100 --- 1000 V CURRENT: 4.0 A
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