4AM17 Silicon N/P-Channel/P-Channel Power MOS FET Array

Hitachi Semiconductor

Description

4AM17 Silicon N/P Channel MOS FET High Speed Power Switching ADE-208-729 (Z) 1st.Edition February 1999 .

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Datasheet Specifications

Part number: 4AM17
Manufacturer: Hitachi Semiconductor
File Size: 62.53 KB
Datasheet: 4AM17_HitachiSemiconductor.pdf
Description: Silicon N/P-Channel/P-Channel Power MOS FET Array

Features

* Low on-resistance N Channel: R DS(on) ≤0.17 Ω, VGS = 10 V, ID = 4 A P Channel : R DS(on) ≤ 0.2 Ω, VGS =
* 10 V, ID =
* 4 A
* 4 V gate drive devices.
* High density mounting Outline SP-12 12 1 G 2 D 5 G 4 D 8 G 9 D 12 G 11 D 34 56 78 910 1112 S 3 S 6

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