4AM16 Silicon N-Channel/P-Channel Power MOS FET Array

Hitachi Semiconductor

Description

4AM16 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching .

📥 Download Datasheet

4AM16 Datasheet Preview — Preview of 4AM16 PDF

Datasheet Specifications

Part number: 4AM16
Manufacturer: Hitachi Semiconductor
File Size: 113.12 KB
Datasheet: 4AM16_HitachiSemiconductor.pdf
Description: Silicon N-Channel/P-Channel Power MOS FET Array

Features

* Low on-resistance N Channel: RDS(on) ≤ 0.17 Ω, VGS = 10 V, I D = 4 A P Channel: RDS(on) ≤ 0.2 Ω, VGS =
* 10 V, I D =
* 4 A
* High speed switching
* High density mounting
* Suitable for H-brided motor driver Outline www. DataSheet. in 4AM16 Absolute Ma

Applications

* based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropr

4AM16 Distributors

📁 Related Datasheet

📌 All Tags

4AM16 Silicon N-Channel P-Channel Power MOS FET Array Hitachi Semiconductor

Hitachi Semiconductor 4AM16-like datasheet