4AM16

Silicon N-Channel/P-Channel Power MOS FET Array

Hitachi Semiconductor

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Download Datasheet (113.12 KB)

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Datasheet Details

Part number:

4AM16

Manufacturer:

Hitachi Semiconductor

File Size:

113.12 KB

Description:

Silicon n-channel/p-channel power mos fet array.
4AM16 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Featu.
res * Low on-resistance N Channel: RDS(on) ≤ 0.17 Ω, VGS = 10 V, I D = 4 A P Channel: RDS(on) ≤ 0.2 .

✔ 4AM16 Features

Low on-resistance N Channel: RDS(on) ≤ 0.17 Ω, VGS = 10 V, I D = 4 A P Channel: RDS(on) ≤ 0.2 Ω, VGS =
10 V, I D =
4 A
High speed switching
High density mounting

✔ 4AM16 Application

based on the examples described herein. 5. No license is granted by implication or otherwise under any paten

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4AM16 Silicon N-Channel P-Channel Power MOS FET Array Hitachi Semiconductor

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