4AM13

Silicon N-Channel/P-Channel Power MOS FET Array

Hitachi Semiconductor

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Download Datasheet (144.85 KB)

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Datasheet Details

Part number:

4AM13

Manufacturer:

Hitachi Semiconductor

File Size:

144.85 KB

Description:

Silicon n-channel/p-channel power mos fet array.
4AM13 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Featu.
res * Low on-resistance N-channel: RDS(on) ≤ 0.4 Ω, VGS = 10 V, ID = 1.5 A P-channel: RDS(on) ≤ 0.45.

✔ 4AM13 Features

Low on-resistance N-channel: RDS(on) ≤ 0.4 Ω, VGS = 10 V, ID = 1.5 A P-channel: RDS(on) ≤ 0.45 Ω, VGS =
10 V, ID =
1.5 A
Capable of 4 V gate drive Low drive

✔ 4AM13 Application

based on the examples described herein. 5. No license is granted by implication or otherwise under any paten

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4AM13 Silicon N-Channel P-Channel Power MOS FET Array Hitachi Semiconductor

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