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6AM13 Silicon N-Channel/P-Channel Complementary Power MOS FET Array

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Description

6AM13 Silicon N-Channel/P-Channel Complementary Power MOS FET Array ADE-208-1217 (Z) 1st.Edition Mar.2001 Application High speed power switching F.

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Datasheet Specifications

Part number
6AM13
Manufacturer
Hitachi Semiconductor
File Size
65.22 KB
Datasheet
6AM13_HitachiSemiconductor.pdf
Description
Silicon N-Channel/P-Channel Complementary Power MOS FET Array

Features

* Low on-resistance N-channel: RDS(on) ≤ 0.075 , VGS = 10 V, I D = 5 A P-channel: RDS(on) ≤ 0.12 , VGS =
* 10 V, I D =
* 5 A
* Capable of 4 V gate drive
* Low drive current
* High speed switching
* High density mounting
* Suitable for H-b

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