6AM13 Datasheet, Array, Hitachi Semiconductor

6AM13 Features

• Array
• Low on-resistance N-channel: RDS(on) ≤ 0.075 , VGS = 10 V, I D = 5 A P-channel: RDS(on) ≤ 0.12 , VGS =
    –10 V, I D =
    –5 A
• Capable of 4

PDF File Details

Part number:

6AM13

Manufacturer:

Hitachi Semiconductor

File Size:

65.22kb

Download:

📄 Datasheet

Description:

Silicon n-channel/p-channel complementary power mos fet array.

6AM13 Application

• Applications de JEDEC EIAJ Mass (reference value) SP-12TA
    –
    – 6.1 g 11 6AM13 Cautions 1. Hitachi neither warrants

TAGS

📁 Related Datasheet

6AM11 - Silicon N-channel/p-channel Power MOS Fet Array (Renesas)
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. Th.

6AM12 - Silicon N-channel/p-channel Complementary Power MOS Fet Array (Renesas)
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. Th.

6AM14 - Silicon N-Channel/P-Channel Power MOS FET Array (Hitachi Semiconductor)
6AM14 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • • • • Low on-resistance Low drive current Hi.

6AM15 - Silicon N/P Channel MOS FET High Speed Power Switching (Hitachi Semiconductor)
6AM15 Silicon N/P Channel MOS FET High Speed Power Switching ADE-208-719 (Z) 1st. Edition February 1999 Features • Low on-resistance N Channel : RDS(.

6A01 - 6.0A RECTIFIER (Diodes Incorporated)
LT6A01 - LT6A07 Features · · · · · Diffused Junction High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 400A Peak Low Rever.

6A02 - 6.0A RECTIFIER (Diodes Incorporated)
LT6A01 - LT6A07 Features · · · · · Diffused Junction High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 400A Peak Low Rever.

6A03 - 6.0A RECTIFIER (Diodes Incorporated)
LT6A01 - LT6A07 Features · · · · · Diffused Junction High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 400A Peak Low Rever.

6A04 - 6.0A RECTIFIER (Diodes Incorporated)
LT6A01 - LT6A07 Features · · · · · Diffused Junction High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 400A Peak Low Rever.

6A05 - SILICON RECTIFIER DIODE (EIC)
$  $ 6,/,&215(&7,),(5',2'(6 359  9ROWV ,R  $PSHUHV ' )($785(6  +LJKFXUUHQWFDSDELOLW\  +LJKVXUJHFXUUHQWFDSD.

6A05 - SILICON RECTIFIER (Rectron Semiconductor)
RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 6.0 Amperes 6A05 THRU 6A10 FEATURES * Low cos.