6AM13 Datasheet - Hitachi Semiconductor

6AM13 Silicon N-Channel/P-Channel Complementary Power MOS FET Array

6AM13 Features

* Low on-resistance N-channel: RDS(on) ≤ 0.075 , VGS = 10 V, I D = 5 A P-channel: RDS(on) ≤ 0.12 , VGS =

* 10 V, I D =

* 5 A

* Capable of 4 V gate drive

* Low drive current

* High speed switching

* High density mounting

* Suitable for H-b

Datasheet Details

6AM13

Hitachi Semiconductor

65.22 KB

Silicon n-channel/p-channel complementary power mos fet array.

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