Part number:
6AM15
Manufacturer:
Hitachi Semiconductor
File Size:
236.53 KB
Description:
Silicon n/p channel mos fet high speed power switching.
Datasheet Details
6AM15 Features
* Low on-resistance N Channel : RDS(on) = 0.045 Ω typ. P Channel : RDS(on) = 0.085 Ω typ. High speed switching 4 V gate drive device can be driven from 5 V source High density mounting
* Outline 6AM15 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Nch
Datasheet Details
6AM15
Hitachi Semiconductor
236.53 KB
Silicon n/p channel mos fet high speed power switching.
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