6AM15 - Silicon N/P Channel MOS FET High Speed Power Switching

Hitachi Semiconductor

Datasheet Details

Part number	6AM15
Manufacturer	Hitachi Semiconductor
File Size	236.53 KB
Description	Silicon N/P Channel MOS FET High Speed Power Switching
Datasheet	6AM15_HitachiSemiconductor.pdf

Low on-resistance N Channel : RDS(on) = 0.045 Ω typ. P Channel : RDS(on) = 0.085 Ω typ. High speed switching 4 V gate drive device can be driven from 5 V source High density mounting.
Outline 6AM15 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Nch Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel dissipation Chann.

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Published: Apr 3, 2005 |