6AM15 Datasheet, Switching, Hitachi Semiconductor

6AM15 Features

• Switching
• Low on-resistance N Channel : RDS(on) = 0.045 Ω typ. P Channel : RDS(on) = 0.085 Ω typ. High speed switching 4 V gate drive device can be driven from 5 V source High density m

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Part number:

6AM15

Manufacturer:

Hitachi Semiconductor

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236.53kb

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📄 Datasheet

Description:

Silicon n/p channel mos fet high speed power switching.

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