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6AM15 Silicon N/P Channel MOS FET High Speed Power Switching

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Description

6AM15 Silicon N/P Channel MOS FET High Speed Power Switching ADE-208-719 (Z) 1st.Edition February 1999 .

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Datasheet Specifications

Part number
6AM15
Manufacturer
Hitachi Semiconductor
File Size
236.53 KB
Datasheet
6AM15_HitachiSemiconductor.pdf
Description
Silicon N/P Channel MOS FET High Speed Power Switching

Features

* Low on-resistance N Channel : RDS(on) = 0.045 Ω typ. P Channel : RDS(on) = 0.085 Ω typ. High speed switching 4 V gate drive device can be driven from 5 V source High density mounting
* Outline 6AM15 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Nch

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