* Low on-resistance N-channel: RDS(on) ≤ 0.17 , VGS = 10 V, I D = 2.5 A P-channel: RDS(on) ≤ 0.2 , VGS =
* 10 V, I D =
* 2.5 A
* Capable of 4 V gate drive
* Low drive current
* High speed switching
* High density mounting
* Suitable for H
6AM11
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Silicon n-channel/p-channel power mos fet array.
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. Th.
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