Part number:
6AM11
Manufacturer:
File Size:
121.66 KB
Description:
Silicon n-channel/p-channel power mos fet array
| Image | Manufacturer | B2B MPN | Description | Distributor | Stock | Quantity | Price | Buy Now |
|---|---|---|---|---|---|---|---|---|
 |
Amphenol Corporation | 12796AM11ZCR | (Alt: 12796AM11ZCR) | Avnet Abacus | 0 | 0 |
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6AM11
121.66 KB
Silicon n-channel/p-channel power mos fet array
* Low on-resistance N-channel: RDS(on) ≤ 0.17 , VGS = 10 V, I D = 2.5 A P-channel: RDS(on) ≤ 0.2 , VGS =
* 10 V, I D =
* 2.5 A
* Capable of 4 V gate drive
* Low drive current
* High speed switching
* High density mounting
* Suitable for H
📁 Related Datasheet
6AM12 - Silicon N-channel/p-channel Complementary Power MOS Fet Array
(Renesas)
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
Th.
6AM13 - Silicon N-Channel/P-Channel Complementary Power MOS FET Array
(Hitachi Semiconductor)
6AM13
Silicon N-Channel/P-Channel Complementary Power MOS FET Array
ADE-208-1217 (Z) 1st. Edition Mar. 2001 Application
High speed power switching
F.
6AM14 - Silicon N-Channel/P-Channel Power MOS FET Array
(Hitachi Semiconductor)
6AM14
Silicon N-Channel/P-Channel Power MOS FET Array
Application
High speed power switching
Features
• • • • Low on-resistance Low drive current Hi.
6AM15 - Silicon N/P Channel MOS FET High Speed Power Switching
(Hitachi Semiconductor)
6AM15
Silicon N/P Channel MOS FET High Speed Power Switching
ADE-208-719 (Z) 1st. Edition February 1999 Features
• Low on-resistance N Channel : RDS(.
6A01 - 6.0A RECTIFIER
(Diodes Incorporated)
LT6A01 - LT6A07
Features
· · · · · Diffused Junction High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 400A Peak Low Rever.
6A02 - 6.0A RECTIFIER
(Diodes Incorporated)
LT6A01 - LT6A07
Features
· · · · · Diffused Junction High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 400A Peak Low Rever.
