Datasheet4U.com

6AM11 - Silicon N-channel/p-channel Power MOS Fet Array

Renesas

📥 Download Datasheet

6AM11 Datasheet Preview — Preview of 6AM11 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	6AM11
Manufacturer	Renesas ↗
File Size	121.66 KB
Description	Silicon N-channel/p-channel Power MOS Fet Array
Datasheet	6AM11_Renesas.pdf

6AM11 Product details

Features

Low on-resistance N-channel: RDS(on) ≤ 0.17 , VGS = 10 V, I D = 2.5 A P-channel: RDS(on) ≤ 0.2 , VGS =.
10 V, I D =.
2.5 A.
Capable of 4 V gate drive.
Low drive current.
High speed switching.
High density mounting.
Suitable for H-bridged motor driver 6AM11 Outline SP-12 5 S Pch 6 G 4G 11 G 12 S 12 Nch 2G D3 8 G D7 9 G D 10 34 56 78 9 10 1112 www. DataSheet4U. com S 1 N-ch Source 1. 2, 8, 9 N-ch Gate 3, 7, 10. N-ch Drain.

📁 6AM11 Similar Datasheet

6AM13 - Silicon N-Channel/P-Channel Complementary Power MOS FET Array (Hitachi Semiconductor)
6AM14 - Silicon N-Channel/P-Channel Power MOS FET Array (Hitachi Semiconductor)
6AM15 - Silicon N/P Channel MOS FET High Speed Power Switching (Hitachi Semiconductor)

Other Datasheets by Renesas

6AM12 - Silicon N-channel/p-channel Complementary Power MOS Fet Array

Published: Jun 26, 2008 |