6AM11 Datasheet, Array, Renesas

6AM11 Features

• Array
• Low on-resistance N-channel: RDS(on) ≤ 0.17 , VGS = 10 V, I D = 2.5 A P-channel: RDS(on) ≤ 0.2 , VGS =
    –10 V, I D =
    –2.5 A
• Capable of

PDF File Details

Part number:

6AM11

Manufacturer:

Renesas ↗

File Size:

121.66kb

Download:

📄 Datasheet

Description:

Silicon n-channel/p-channel power mos fet array.

6AM11 Application

• Applications ry Time 20 10 5 200 100 50 di/dt = 50 A/µs, Ta = 25°C VGS = 0 Pulse Test 2 1.0 0.5
    –0.1
    –0.2 20 10

TAGS

6AM11

Renesas

📁 Related Datasheet

6AM12 - Silicon N-channel/p-channel Complementary Power MOS Fet Array (Renesas)
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. Th.

6AM13 - Silicon N-Channel/P-Channel Complementary Power MOS FET Array (Hitachi Semiconductor)
6AM13 Silicon N-Channel/P-Channel Complementary Power MOS FET Array ADE-208-1217 (Z) 1st. Edition Mar. 2001 Application High speed power switching F.

6AM14 - Silicon N-Channel/P-Channel Power MOS FET Array (Hitachi Semiconductor)
6AM14 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • • • • Low on-resistance Low drive current Hi.

6AM15 - Silicon N/P Channel MOS FET High Speed Power Switching (Hitachi Semiconductor)
6AM15 Silicon N/P Channel MOS FET High Speed Power Switching ADE-208-719 (Z) 1st. Edition February 1999 Features • Low on-resistance N Channel : RDS(.

6A01 - 6.0A RECTIFIER (Diodes Incorporated)
LT6A01 - LT6A07 Features · · · · · Diffused Junction High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 400A Peak Low Rever.

6A02 - 6.0A RECTIFIER (Diodes Incorporated)
LT6A01 - LT6A07 Features · · · · · Diffused Junction High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 400A Peak Low Rever.

6A03 - 6.0A RECTIFIER (Diodes Incorporated)
LT6A01 - LT6A07 Features · · · · · Diffused Junction High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 400A Peak Low Rever.

6A04 - 6.0A RECTIFIER (Diodes Incorporated)
LT6A01 - LT6A07 Features · · · · · Diffused Junction High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 400A Peak Low Rever.

6A05 - SILICON RECTIFIER DIODE (EIC)
$  $ 6,/,&215(&7,),(5',2'(6 359  9ROWV ,R  $PSHUHV ' )($785(6  +LJKFXUUHQWFDSDELOLW\  +LJKVXUJHFXUUHQWFDSD.

6A05 - SILICON RECTIFIER (Rectron Semiconductor)
RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 6.0 Amperes 6A05 THRU 6A10 FEATURES * Low cos.