6AM12 Datasheet - Renesas

6AM12 Silicon N-channel/p-channel Complementary Power MOS Fet Array

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) www.DataSheet4U.com Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semico.

6AM12 Features

* Low on-resistance N-channel: RDS(on) ≤ 0.17 , VGS = 10 V, I D = 4 A P-channel: RDS(on) ≤ 0.2 , VGS =

* 10 V, I D =

* 4 A

* Capable of 4 V gate drive

* Low drive current

* High speed switching

* High density mounting

* Suitable for H-bri

6AM12 Datasheet (118.66 KB)