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Silicon n-channel/p-channel complementary power mos fet array.
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6AM11 - Silicon N-channel/p-channel Power MOS Fet Array
(Renesas)
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
Th.
6AM13 - Silicon N-Channel/P-Channel Complementary Power MOS FET Array
(Hitachi Semiconductor)
6AM13
Silicon N-Channel/P-Channel Complementary Power MOS FET Array
ADE-208-1217 (Z) 1st. Edition Mar. 2001 Application
High speed power switching
F.
6AM14 - Silicon N-Channel/P-Channel Power MOS FET Array
(Hitachi Semiconductor)
6AM14
Silicon N-Channel/P-Channel Power MOS FET Array
Application
High speed power switching
Features
• • • • Low on-resistance Low drive current Hi.
6AM15 - Silicon N/P Channel MOS FET High Speed Power Switching
(Hitachi Semiconductor)
6AM15
Silicon N/P Channel MOS FET High Speed Power Switching
ADE-208-719 (Z) 1st. Edition February 1999 Features
• Low on-resistance N Channel : RDS(.
6A01 - 6.0A RECTIFIER
(Diodes Incorporated)
LT6A01 - LT6A07
Features
· · · · · Diffused Junction High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 400A Peak Low Rever.
6A02 - 6.0A RECTIFIER
(Diodes Incorporated)
LT6A01 - LT6A07
Features
· · · · · Diffused Junction High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 400A Peak Low Rever.
6A03 - 6.0A RECTIFIER
(Diodes Incorporated)
LT6A01 - LT6A07
Features
· · · · · Diffused Junction High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 400A Peak Low Rever.
6A04 - 6.0A RECTIFIER
(Diodes Incorporated)
LT6A01 - LT6A07
Features
· · · · · Diffused Junction High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 400A Peak Low Rever.
6A05 - SILICON RECTIFIER DIODE
(EIC)
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6A05 - SILICON RECTIFIER
(Rectron Semiconductor)
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SILICON RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 6.0 Amperes
6A05 THRU 6A10
FEATURES
* Low cos.