H5N2005DL Datasheet - Hitachi Semiconductor

H5N2005DL Silicon N Channel MOS FET High Speed Power Switching

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) www.DataSheet4U.com Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semico.

H5N2005DL Features

* Low on-resistance www.DataSheet4U.com

* Low drive current

* High speed switching Outline DPAK-2 4 4 D 1 2 3 H5N2005DS G 1 2 3 H5N2005DL S 1. Gate 2. Drain 3. Source 4. Drain H5N2005DL, H5N2005DS Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate

H5N2005DL_HitachiSemiconductor.pdf

H5N2005DL Datasheet Preview — Preview of H5N2005DL PDF

Datasheet Details

Part number:

H5N2005DL

Manufacturer:

Hitachi Semiconductor

File Size:

89.02 KB

Description:

Silicon n channel mos fet high speed power switching.

H5N2005DL Distributor

📁 Related Datasheet

H5N2005DL MOSFET (Renesas)

H5N2005DS MOSFET (Renesas)

H5N2005DS Silicon N Channel MOS FET High Speed Power Switching (Hitachi Semiconductor)

H5N2001LD Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)

H5N2001LM Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)

H5N2001LS Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)

H5N2003P Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)

H5N2004DL Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)

TAGS

H5N2005DL H5N2005DL Silicon Channel MOS FET High Speed Power Switching Hitachi Semiconductor