* Low on-resistance www.DataSheet4U.com
* Low drive current
* High speed switching Outline DPAK-2 4 4 D 1 2 3 H5N2005DS G 1 2 3 H5N2005DL S 1. Gate 2. Drain 3. Source 4. Drain H5N2005DL, H5N2005DS Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate
H5N2005DL Datasheet (89.02 KB)
H5N2005DL
Hitachi Semiconductor
89.02 KB
Silicon n channel mos fet high speed power switching.
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
Th.
📁 Related Datasheet
H5N2005DL - MOSFET
(Renesas)
H5N2005DL, H5N2005DS
200V - 6A - MOS FET High Speed Power Switching
Preliminary Datasheet
R07DS0796EJ0400 (Previous: REJ03G1104-0300)
Rev.4.00 Jun 07.
H5N2005DS - MOSFET
(Renesas)
H5N2005DL, H5N2005DS
200V - 6A - MOS FET High Speed Power Switching
Preliminary Datasheet
R07DS0796EJ0400 (Previous: REJ03G1104-0300)
Rev.4.00 Jun 07.
H5N2005DS - Silicon N Channel MOS FET High Speed Power Switching
(Hitachi Semiconductor)
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
Th.
H5N2001LD - Silicon N Channel MOS FET High Speed Power Switching
(Renesas Technology)
H5N2001LD, H5N2001LS, H5N2001LM
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1339-0600 Rev.6.00 Jul 14, 2006
Features
• Low on-resistan.
H5N2001LM - Silicon N Channel MOS FET High Speed Power Switching
(Renesas Technology)
H5N2001LD, H5N2001LS, H5N2001LM
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1339-0600 Rev.6.00 Jul 14, 2006
Features
• Low on-resistan.
H5N2001LS - Silicon N Channel MOS FET High Speed Power Switching
(Renesas Technology)
H5N2001LD, H5N2001LS, H5N2001LM
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1339-0600 Rev.6.00 Jul 14, 2006
Features
• Low on-resistan.
H5N2003P - Silicon N Channel MOS FET High Speed Power Switching
(Renesas Technology)
H5N2003P
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0235-0100Z Rev.1.00 Apr.09.2004
Features
• Low on-resistance • Low leakage curren.
H5N2004DL - Silicon N Channel MOS FET High Speed Power Switching
(Renesas Technology)
H5N2004DL, H5N2004DS
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1103-0200 (Previous: ADE-208-1372) Rev.2.00 Sep 07, 2005
Features
.
