Part number:
H5N2004DL
Manufacturer:
Renesas ↗ Technology
File Size:
126.44 KB
Description:
Silicon n channel mos fet high speed power switching.
* www.DataSheet4U.com
* Low
* Low on-resistance: R DS (on) = 0.38 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 200 V)
* High speed switching: tf = 10 ns typ (at VGS = 10 V, VDD = 100 V, ID = 4 A)
* Low gate charge: Qg = 14 nC typ (at VDD = 160 V, VGS = 10 V, ID =
H5N2004DL Datasheet (126.44 KB)
H5N2004DL
Renesas ↗ Technology
126.44 KB
Silicon n channel mos fet high speed power switching.
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