H5N2004DL Datasheet, Switching, Renesas Technology

✔ H5N2004DL Features

www.DataSheet4U.com
Low
Low on-resistance: R DS (on) = 0.38 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 200 V)
High speed switching: tf = 10 ns typ (at VGS =

Renesas Technology manufacturer logo

H5N2004DL

126.44 KB

Silicon n channel mos fet high speed power switching.

📁 Related Datasheet

H5N2004DS - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)

H5N2001LD - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)

H5N2001LM - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)

H5N2001LS - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)

H5N2003P - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)

H5N2005DL - MOSFET (Renesas)

H5N2005DL - Silicon N Channel MOS FET High Speed Power Switching (Hitachi Semiconductor)

H5N2005DS - MOSFET (Renesas)

TAGS