Datasheet Details
- Part number
- H5N2004DL
- Manufacturer
- Renesas ↗ Technology
- File Size
- 126.44 KB
- Datasheet
- H5N2004DL_RenesasTechnology.pdf
- Description
- Silicon N Channel MOS FET High Speed Power Switching
H5N2004DL Description
H5N2004DL, H5N2004DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1103-0200 (Previous: ADE-208-1372) Rev.2.00 Sep 07, 2005 .
H5N2004DL Features
* www. DataSheet4U. com
* Low
* Low on-resistance: R DS (on) = 0.38 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 200 V)
* High speed switching: tf = 10 ns typ (at VGS = 10 V, VDD = 100 V, ID = 4 A)
* Low gate charge: Qg = 14 nC typ (at VDD = 160 V, VGS = 10 V, ID =
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