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H5N2004DL Datasheet - Renesas Technology

H5N2004DL Silicon N Channel MOS FET High Speed Power Switching

H5N2004DL Features

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* Low

* Low on-resistance: R DS (on) = 0.38 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 200 V)

* High speed switching: tf = 10 ns typ (at VGS = 10 V, VDD = 100 V, ID = 4 A)

* Low gate charge: Qg = 14 nC typ (at VDD = 160 V, VGS = 10 V, ID =

H5N2004DL Datasheet (126.44 KB)

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Datasheet Details

Part number:

H5N2004DL

Manufacturer:

Renesas ↗ Technology

File Size:

126.44 KB

Description:

Silicon n channel mos fet high speed power switching.

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H5N2004DL Silicon Channel MOS FET High Speed Power Switching Renesas Technology

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