H5N2901FL-M0
96.52 KB
Mosfet.
H5N2901FL-M0
290V - 18A - MOS FET High Speed Power Switching
Features
* Low on-resistance RDS(on) = .
0.07 typ. (at ID = 9 A, VGS = 10 V, Ta = 25C)
* Low leakage current * High speed switching * Buil.
📁 Related Datasheet
H5N2901FN - Silicon N-Channel MOSFET
(Renesas Technology)
..
H5N2901FN
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0372-0100Z Rev.1.00 May.28.2004
Features
• Low on-resistanc.
H5N2001LD - Silicon N Channel MOS FET High Speed Power Switching
(Renesas Technology)
H5N2001LD, H5N2001LS, H5N2001LM
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1339-0600 Rev.6.00 Jul 14, 2006
Features
• Low on-resistan.
H5N2001LM - Silicon N Channel MOS FET High Speed Power Switching
(Renesas Technology)
H5N2001LD, H5N2001LS, H5N2001LM
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1339-0600 Rev.6.00 Jul 14, 2006
Features
• Low on-resistan.
H5N2001LS - Silicon N Channel MOS FET High Speed Power Switching
(Renesas Technology)
H5N2001LD, H5N2001LS, H5N2001LM
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1339-0600 Rev.6.00 Jul 14, 2006
Features
• Low on-resistan.
H5N2003P - Silicon N Channel MOS FET High Speed Power Switching
(Renesas Technology)
H5N2003P
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0235-0100Z Rev.1.00 Apr.09.2004
Features
• Low on-resistance • Low leakage curren.
H5N2004DL - Silicon N Channel MOS FET High Speed Power Switching
(Renesas Technology)
H5N2004DL, H5N2004DS
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1103-0200 (Previous: ADE-208-1372) Rev.2.00 Sep 07, 2005
Features
.
