H5N2004DS Datasheet, Switching, Renesas Technology

H5N2004DS Features

• Switching www.DataSheet4U.com
• Low
• Low on-resistance: R DS (on) = 0.38 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 200 V)
• High speed switching: tf = 10 ns typ

PDF File Details

Part number:

H5N2004DS

Manufacturer:

Renesas ↗ Technology

File Size:

126.44kb

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📄 Datasheet

Description:

Silicon n channel mos fet high speed power switching.

TAGS

H5N2004DS

Renesas Technology

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