H5N2004DS, H5N2004DL Datasheet - Renesas Technology

H5N2004DS - Silicon N Channel MOS FET High Speed Power Switching

H5N2004DS Features

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* Low

* Low on-resistance: R DS (on) = 0.38 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 200 V)

* High speed switching: tf = 10 ns typ (at VGS = 10 V, VDD = 100 V, ID = 4 A)

* Low gate charge: Qg = 14 nC typ (at VDD = 160 V, VGS = 10 V, ID =

Datasheet Details

H5N2004DS, H5N2004DL

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Silicon n channel mos fet high speed power switching.

This datasheet PDF includes multiple part numbers: H5N2004DS, H5N2004DL.
Please refer to the document for exact specifications by model.

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