Datasheet Specifications
- Part number
- H5N5005PL
- Manufacturer
- Hitachi
- File Size
- 52.13 KB
- Datasheet
- H5N5005PL_Hitachi.pdf
- Description
- Silicon N-Channel MOSFET
Description
H5N5005PL Silicon N Channel MOS FET High Speed Power Switching ADE-208-1382 (Z) Target Specification 1st.Edition Mar.2001 .Features
* Low on-resistance: R DS(on) = 0.064 typ. Low leakage current: IDSS = 10 µA max (at VDS = 500 V) High speed switching: tf = 300 ns typ (at VGS = 10 V, VDD = 250 V, ID = 30 A) Low gate charge: Qg = 300 nC typ (at VDD = 400 V, VGS = 10 V, IDH5N5005PL Distributors
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