H5N5005PL - Silicon N-Channel MOSFET
H5N5005PL Features
* Low on-resistance: R DS(on) = 0.064 typ. Low leakage current: IDSS = 10 µA max (at VDS = 500 V) High speed switching: tf = 300 ns typ (at VGS = 10 V, VDD = 250 V, ID = 30 A) Low gate charge: Qg = 300 nC typ (at VDD = 400 V, VGS = 10 V, ID
