H5N50ADNF Datasheet, Mosfet, ChipSourceTek

H5N50ADNF Features

• Mosfet
• RDSON≤1.5Ω @Vgs=10V, Id=2.5A k
• Ultra Low gate Charge(typical 16.5nC)
• Low Crss (typical 7.2pF) e
• Fast switching capability
• 100% avalanch

PDF File Details

Part number:

H5N50ADNF

Manufacturer:

ChipSourceTek

File Size:

1.33MB

Download:

📄 Datasheet

Description:

500v n-channel planar mosfet. TO-252 TO-220F 500V N-Channel Planar MOSFET HRH5N50ADNx is HRM high voltage MOSFET family based on advanced planar stripe DMOS t

H5N50ADNF Application

• Applications Drain e
• Switch Mode Power Supply (SMPS) c
• Uninterruptible Power Supply (UPS)
• Power Factor Correction (

TAGS

H5N50ADNF

ChipSourceTek

📁 Related Datasheet

H5N50ADND - 500V N-Channel Planar MOSFET (ChipSourceTek)
500V N-Channel Planar MOSFET HRH5N50ADNx Description TO-252 TO-220F 500V N-Channel Planar MOSFET HRH5N50ADNx is HRM high voltage MOSFET family ba.

H5N50ADNP - 500V N-Channel Planar MOSFET (ChipSourceTek)
500V N-Channel Planar MOSFET HRH5N50ADNx Description TO-252 TO-220F 500V N-Channel Planar MOSFET HRH5N50ADNx is HRM high voltage MOSFET family ba.

H5N50ADNU - 500V N-Channel Planar MOSFET (ChipSourceTek)
500V N-Channel Planar MOSFET HRH5N50ADNx Description TO-252 TO-220F 500V N-Channel Planar MOSFET HRH5N50ADNx is HRM high voltage MOSFET family ba.

H5N5001FM - Silicon N-Channel MOSFET (Hitachi)
H5N5001FM Silicon N Channel MOS FET High Speed Power Switching ADE-208-1380 (Z) 1st. Edition Mar. 2001 Features • • • • • Low on-resistance Low leaka.

H5N5004PL - Silicon N-Channel MOSFET (Hitachi)
H5N5004PL Silicon N Channel MOS FET High Speed Power Switching ADE-208-1381 (Z) Target Specification 1st. Edition Mar. 2001 Features • • • • • • Low.

H5N5005PL - Silicon N-Channel MOSFET (Hitachi)
H5N5005PL Silicon N Channel MOS FET High Speed Power Switching ADE-208-1382 (Z) Target Specification 1st. Edition Mar. 2001 Features • • • • • • Low.

H5N5005PL - Silicon N-Channel MOS FET (Renesas)
H5N5005PL Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance: RDS(on) = 0.070 Ω typ. • Low leakage current: IDSS = 10 .

H5N5006FM - Silicon N-Channel MOSFET (Hitachi)
H5N5006FM Silicon N Channel MOS FET High Speed Power Switching ADE-208-1112 (Z) 1st. Edition Mar. 2001 Features • • • • • Low on-resistance: R DS(on.

H5N5006FM - Silicon N-Channel MOSFET (Renesas)
H5N5006FM Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance: R DS (on) = 2.5 Ω typ. • Low leakage current: IDSS = 1 µ.

H5N5006LD - (H5N5006xx) Silicon N-Channel MOSFET (Hitachi)
H5N5006LD, H5N5006LS, H5N5006LM Silicon N Channel MOS FET High Speed Power Switching ADE-208-1549 (Z) Features • Low on-resistance • Low leakage cur.