H5N5001FM - Silicon N-Channel MOSFET
H5N5001FM Features
* Low on-resistance Low leakage current High speed switching Low gate charge Avalanche ratings : RDS(on) =1.1 Ω typ. : I DSS =1 µA max (at VDS = 500 V) : tf = 15ns typ (at VGS = 10 V, V DD = 250 V, I D = 2.5 A) : Qg = 15nC typ (at VDD = 400 V, V GS = 1
