H5N5016PL
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Silicon n-channel mosfet.
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H5N5016PL-E0-E - MOSFET
(Renesas)
H5N5016PL-E0-E
500V - 50A - MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 0.108 Ω typ. (at ID = 25 A, VGS = 10 V, Ta = 25°.
H5N5012P - Silicon N Channel MOS FET High Speed Power Switching
(Renesas Technology)
H5N5012P
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0378-0200Z Rev.2.00 Jun.17.2004
Features
• Low on-resistance • Low leakage curren.
H5N5015P - Silicon N-Channel MOSFET
(Hitachi)
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H5N5015P - Silicon N-Channel MOSFET
(Renesas)
H5N5015P
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance • Low leakage current • High speed switching • Low gate ch.
H5N5001FM - Silicon N-Channel MOSFET
(Hitachi)
H5N5001FM
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-1380 (Z) 1st. Edition Mar. 2001 Features
• • • • • Low on-resistance Low leaka.
H5N5004PL - Silicon N-Channel MOSFET
(Hitachi)
H5N5004PL
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-1381 (Z) Target Specification 1st. Edition Mar. 2001 Features
• • • • • •
Low.
H5N5005PL - Silicon N-Channel MOSFET
(Hitachi)
H5N5005PL
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-1382 (Z) Target Specification 1st. Edition Mar. 2001 Features
• • • • • •
Low.
H5N5005PL - Silicon N-Channel MOS FET
(Renesas)
H5N5005PL
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance: RDS(on) = 0.070 Ω typ. • Low leakage current: IDSS = 10 .
H5N5006FM - Silicon N-Channel MOSFET
(Hitachi)
H5N5006FM
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-1112 (Z) 1st. Edition Mar. 2001 Features
• • • • •
Low on-resistance: R DS(on.
H5N5006FM - Silicon N-Channel MOSFET
(Renesas)
H5N5006FM
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance: R DS (on) = 2.5 Ω typ. • Low leakage current: IDSS = 1 µ.