Datasheet4U Logo Datasheet4U.com

H5N5012P

Silicon N Channel MOS FET High Speed Power Switching

H5N5012P Datasheet (85.75 KB)

Preview of H5N5012P PDF

Datasheet Details

Part number:

H5N5012P

Manufacturer:

Renesas ↗ Technology

File Size:

85.75 KB

Description:

Silicon n channel mos fet high speed power switching.

H5N5012P Features

* Low on-resistance

* Low leakage current www.DataSheet4U.com

* High speed switching

* Built-in fast recovery diode Outline TO-3P D G 1. Gate 2. Drain (Flange) 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source v

📁 Related Datasheet

H5N5015P - Silicon N-Channel MOSFET (Hitachi)
w w w t a .D S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c .

H5N5015P - Silicon N-Channel MOSFET (Renesas)
H5N5015P Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low leakage current • High speed switching • Low gate ch.

H5N5016PL - Silicon N-Channel MOSFET (Renesas Technology)
H5N5016PL Silicon N Channel MOS FET High Speed Power Switching REJ03G0175-0200Z Rev.2.00 Jul.02.2004 Features • Low on-resistance • Low leakage curre.

H5N5016PL-E0-E - MOSFET (Renesas)
H5N5016PL-E0-E 500V - 50A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.108 Ω typ. (at ID = 25 A, VGS = 10 V, Ta = 25°.

H5N5001FM - Silicon N-Channel MOSFET (Hitachi)
H5N5001FM Silicon N Channel MOS FET High Speed Power Switching ADE-208-1380 (Z) 1st. Edition Mar. 2001 Features • • • • • Low on-resistance Low leaka.

H5N5004PL - Silicon N-Channel MOSFET (Hitachi)
H5N5004PL Silicon N Channel MOS FET High Speed Power Switching ADE-208-1381 (Z) Target Specification 1st. Edition Mar. 2001 Features • • • • • • Low.

TAGS

H5N5012P Silicon Channel MOS FET High Speed Power Switching Renesas Technology

Image Gallery

H5N5012P Datasheet Preview Page 2 H5N5012P Datasheet Preview Page 3

H5N5012P Distributor