H5N2509P - Silicon N-Channel MOSFET

Hitachi

Datasheet Details

Low on-resistance : RDS(on) = 0.053 Ω typ.
Low leakage current : IDSS = 1 µA max (at VDS = 250 V, VGS = 0 V).
High speed switching : tf = 110 ns typ (at ID = 15 A, RL = 8.3 Ω, VGS = 10 V).
Low gate charge : Qg = 110 nC typ (at VDD = 200 V, VGS = 10 V, ID = 30 A).
Avalanche ratings Outline TO.
3P D G S 1 2 3 1. Gate 2. Drain (Flange) 3. Source H5N2509P Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Ga.

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Published: Dec 4, 2017 |