H5N2509P MOSFET Datasheet - Hitachi

H5N2509P Features

Mosfet
Low on-resistance : RDS(on) = 0.053 Ω typ.
Low leakage current : IDSS = 1 µA max (at VDS = 250 V, VGS = 0 V)
High speed switching : tf = 110 ns typ (at

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Part number:

H5N2509P

Manufacturer:

Hitachi

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56.25kb

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📄 Datasheet

Description:

Silicon n-channel mosfet.

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