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H5N2509P Silicon N-Channel MOSFET

H5N2509P Description

H5N2509P Silicon N Channel MOSFET High Speed Power Switching ADE-208-1378 (Z) Target Specification 1st.Edition Mar.2001 .

H5N2509P Features

* Low on-resistance : RDS(on) = 0.053 Ω typ.
* Low leakage current : IDSS = 1 µA max (at VDS = 250 V, VGS = 0 V)
* High speed switching : tf = 110 ns typ (at ID = 15 A, RL = 8.3 Ω, VGS = 10 V)
* Low gate charge : Qg = 110 nC typ (at VDD = 200 V, VGS = 10 V, ID =

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Datasheet Details

Part number
H5N2509P
Manufacturer
Hitachi
File Size
56.25 KB
Datasheet
H5N2509P-Hitachi.pdf
Description
Silicon N-Channel MOSFET

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Silicon N-Channel MOSFET Hitachi
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