Part number:
H5N2509P
Manufacturer:
Hitachi
File Size:
56.25 KB
Description:
Silicon n-channel mosfet.
* Low on-resistance : RDS(on) = 0.053 Ω typ.
* Low leakage current : IDSS = 1 µA max (at VDS = 250 V, VGS = 0 V)
* High speed switching : tf = 110 ns typ (at ID = 15 A, RL = 8.3 Ω, VGS = 10 V)
* Low gate charge : Qg = 110 nC typ (at VDD = 200 V, VGS = 10 V, ID =
H5N2509P
Hitachi
56.25 KB
Silicon n-channel mosfet.
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