H5N2503P Datasheet - Renesas Technology

Datasheet Details

Part number:

H5N2503P

Manufacturer:

File Size:

121.46 KB

Description:

Silicon n channel mos fet high speed power switching.

H5N2503P, Silicon N Channel MOS FET High Speed Power Switching

H5N2503P Features

* www.DataSheet4U.com

* Low

* Low on-resistance: R DS (on) = 0.04 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 250 V)

* High speed switching: tf = 190 ns typ (at VGS = 10 V, VDD = 125 V, ID = 25 A)

* Low gate charge: Qg = 140 nC typ (at VDD = 200 V, VGS = 10 V, ID

📁 Related Datasheet

📌 All Tags