H5N2503P Datasheet - Renesas Technology

H5N2503P, Silicon N Channel MOS FET High Speed Power Switching

H5N2503P Silicon N Channel MOS FET High Speed Power Switching REJ03G1105-0200 (Previous: ADE-208-1374A) Rev.2.00 Sep 07, 2005 .

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Datasheet Details

Part number:

H5N2503P

Manufacturer:

Renesas ↗ Technology

File Size:

121.46 KB

Description:

Silicon N Channel MOS FET High Speed Power Switching

Features

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* Low
* Low on-resistance: R DS (on) = 0.04 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 250 V)
* High speed switching: tf = 190 ns typ (at VGS = 10 V, VDD = 125 V, ID = 25 A)
* Low gate charge: Qg = 140 nC typ (at VDD = 200 V, VGS = 10 V, ID

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H5N2503P Silicon Channel MOS FET High Speed Power Switching Renesas Technology

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