H5N2503P Switching Datasheet - Renesas Technology

H5N2503P Features

Switching www.DataSheet4U.com
Low
Low on-resistance: R DS (on) = 0.04 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 250 V)
High speed switching: tf = 190 ns typ

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Part number:

H5N2503P

Manufacturer:

Renesas ↗ Technology

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121.46kb

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📄 Datasheet

Description:

Silicon n channel mos fet high speed power switching.

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