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H5N5006FM Datasheet - Renesas

H5N5006FM Silicon N-Channel MOSFET

H5N5006FM Features

* Low on-resistance: R DS (on) = 2.5 Ω typ.

* Low leakage current: IDSS = 1 µA max (at VDS = 500 V)

* High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 1.5 A)

* Low gate charge: Qg = 14 nC typ (at VDD = 400 V, VGS = 10 V, ID = 3 A)

* Avala

H5N5006FM Datasheet (77.05 KB)

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Datasheet Details

Part number:

H5N5006FM

Manufacturer:

Renesas ↗

File Size:

77.05 KB

Description:

Silicon n-channel mosfet.

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H5N5006FM Silicon N-Channel MOSFET Renesas

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