| Image | Manufacturer | B2B MPN | Description | Distributor | Stock | Quantity | Price | Buy Now |
|---|---|---|---|---|---|---|---|---|
 |
Renesas Electronics Corporation | H5N5006FM-E | NCH POWER MOSFET 500V 3A 3000MOHM TO220F - Rail/Tube (Alt: H5N5006FM-E) | Avnet Americas | 0 | 1 units |
$5.3
|
🛒 Buy Now |
H5N5006FM
77.05 KB
Silicon n-channel mosfet.
H5N5006FM
Silicon N Channel MOS FET High Speed Power Switching
Features
* Low on-resistance: R DS (.
on) = 2.5 Ω typ. * Low leakage current: IDSS = 1 µA max (at VDS = 500 V) * High speed switching: tf .
📁 Related Datasheet
H5N5006FM - Silicon N-Channel MOSFET
(Hitachi)
H5N5006FM
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-1112 (Z) 1st. Edition Mar. 2001 Features
• • • • •
Low on-resistance: R DS(on.
H5N5006LD - (H5N5006xx) Silicon N-Channel MOSFET
(Hitachi)
H5N5006LD, H5N5006LS, H5N5006LM
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-1549 (Z)
Features
• Low on-resistance • Low leakage cur.
H5N5006LD - Silicon N-Channel MOSFET
(Renesas)
H5N5006LD, H5N5006LS, H5N5006LM
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1115-0100 (Previous: ADE-208-1549)
Rev.1.00 Apr 07, 2006
Fe.
H5N5006LM - (H5N5006xx) Silicon N-Channel MOSFET
(Hitachi)
H5N5006LD, H5N5006LS, H5N5006LM
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-1549 (Z)
Features
• Low on-resistance • Low leakage cur.
H5N5006LM - Silicon N-Channel MOSFET
(Renesas)
H5N5006LD, H5N5006LS, H5N5006LM
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1115-0100 (Previous: ADE-208-1549)
Rev.1.00 Apr 07, 2006
Fe.
H5N5006LS - (H5N5006xx) Silicon N-Channel MOSFET
(Hitachi)
H5N5006LD, H5N5006LS, H5N5006LM
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-1549 (Z)
Features
• Low on-resistance • Low leakage cur.
