Datasheet4U Logo Datasheet4U.com

H5N2509P

Silicon N-Channel MOSFET

H5N2509P Features

* Low on-resistance: R DS (on) = 0.053 Ω typ.

* Low leakage current: IDSS = 1 µA max (at VDS = 250 V, VGS = 0 V)

* High speed switching: tf = 110 ns typ (at ID = 15 A, RL = 8.3 Ω, VGS = 10 V)

* Low gate charge: Qg = 110 nC typ (at VDD = 200 V, VGS = 10 V, ID = 30 A)

H5N2509P Datasheet (77.49 KB)

Preview of H5N2509P PDF

Datasheet Details

Part number:

H5N2509P

Manufacturer:

Renesas ↗

File Size:

77.49 KB

Description:

Silicon n-channel mosfet.

📁 Related Datasheet

H5N2509P Silicon N-Channel MOSFET (Hitachi)

H5N2501LD Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)

H5N2501LM Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)

H5N2501LS Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)

H5N2502CF Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)

H5N2503P Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)

H5N2504DL Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)

H5N2504DS Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)

H5N2505DL Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)

H5N2505DS Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)

TAGS

H5N2509P Silicon N-Channel MOSFET Renesas

Image Gallery

H5N2509P Datasheet Preview Page 2 H5N2509P Datasheet Preview Page 3

H5N2509P Distributor