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H5N2509P Datasheet - Renesas

H5N2509P Silicon N-Channel MOSFET

H5N2509P Features

* Low on-resistance: R DS (on) = 0.053 Ω typ.

* Low leakage current: IDSS = 1 µA max (at VDS = 250 V, VGS = 0 V)

* High speed switching: tf = 110 ns typ (at ID = 15 A, RL = 8.3 Ω, VGS = 10 V)

* Low gate charge: Qg = 110 nC typ (at VDD = 200 V, VGS = 10 V, ID = 30 A)

H5N2509P-Renesas.pdf

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Datasheet Details

Part number:

H5N2509P

Manufacturer:

Renesas ↗

File Size:

77.49 KB

Description:

Silicon n-channel mosfet.

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H5N2509P H5N2509P Silicon N-Channel MOSFET Renesas

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