H5N2509P MOSFET Datasheet - Renesas

H5N2509P Features

Mosfet
Low on-resistance: R DS (on) = 0.053 Ω typ.
Low leakage current: IDSS = 1 µA max (at VDS = 250 V, VGS = 0 V)
High speed switching: tf = 110 ns typ (at ID =

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Part number:

H5N2509P

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Renesas ↗

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77.49kb

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📄 Datasheet

Description:

Silicon n-channel mosfet.

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