Part number:
H5N2509P
Manufacturer:
File Size:
77.49 KB
Description:
Silicon n-channel mosfet.
* Low on-resistance: R DS (on) = 0.053 Ω typ.
* Low leakage current: IDSS = 1 µA max (at VDS = 250 V, VGS = 0 V)
* High speed switching: tf = 110 ns typ (at ID = 15 A, RL = 8.3 Ω, VGS = 10 V)
* Low gate charge: Qg = 110 nC typ (at VDD = 200 V, VGS = 10 V, ID = 30 A)
H5N2509P
77.49 KB
Silicon n-channel mosfet.
📁 Related Datasheet
H5N2509P Silicon N-Channel MOSFET (Hitachi)
H5N2501LD Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
H5N2501LM Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
H5N2501LS Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
H5N2502CF Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
H5N2503P Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
H5N2504DL Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
H5N2504DS Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
H5N2505DL Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
H5N2505DS Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)