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H5N2509P - Silicon N-Channel MOSFET

H5N2509P Description

H5N2509P Silicon N Channel MOS FET High Speed Power Switching .

H5N2509P Features

* Low on-resistance: R DS (on) = 0.053 Ω typ.
* Low leakage current: IDSS = 1 µA max (at VDS = 250 V, VGS = 0 V)
* High speed switching: tf = 110 ns typ (at ID = 15 A, RL = 8.3 Ω, VGS = 10 V)
* Low gate charge: Qg = 110 nC typ (at VDD = 200 V, VGS = 10 V, ID = 30 A)

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Silicon N-Channel MOSFET Renesas
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