H5N5005PL

Silicon N-Channel MOS FET

Renesas

* Low on-resistance: RDS(on) = 0.070 Ω typ.

* Low leakage current: IDSS = 10 µA max (at VDS = 500 V)

* High speed switching: tf = 300 ns typ (at VGS = 10 V, ID = 30 A, RL = 8.33 Ω)

* Low gate charge: Qg = 300 nC typ (at VDD = 400 V, VGS = 10 V, ID = 60 A)

* Av

H5N5005PL

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Silicon n-channel mos fet.

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H5N5005PL Silicon N-Channel MOS FET Renesas

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