* Low on-resistance www.DataSheet4U.com
* Low drive current
* High speed switching Outline DPAK-2 4 4 D 1 2 3 H5N2005DS G 1 2 3 H5N2005DL S 1. Gate 2. Drain 3. Source 4. Drain H5N2005DL, H5N2005DS Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate
H5N2005DS Datasheet (89.02 KB)
H5N2005DS
Hitachi Semiconductor
89.02 KB
Silicon n channel mos fet high speed power switching.
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. Th.
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