H5N2005DS - Silicon N Channel MOS FET High Speed Power Switching

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Hitachi Semiconductor

Part number	H5N2005DS
Manufacturer	Hitachi Semiconductor
File Size	89.02 KB
Description	Silicon N Channel MOS FET High Speed Power Switching
Datasheet	H5N2005DS Datasheet
Note	This datasheet PDF includes multiple part numbers: H5N2005DS, H5N2005DL. Please refer to the document for exact specifications by model.
Additional preview pages of the H5N2005DS datasheet.

Low on-resistance www. DataSheet4U. com.
Low drive current.
High speed switching Outline DPAK-2 4 4 D 1 2 3 H5N2005DS G 1 2 3 H5N2005DL S 1. Gate 2. Drain 3. Source 4. Drain H5N2005DL, H5N2005DS Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation www. DataSheet4U. com Symbol VDSS VGSS ID ID N.

📁 Similar Datasheet

H5N2005DS - MOSFET (Renesas)
H5N2005DL - MOSFET (Renesas)
H5N2001LD - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
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H5N2001LS - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
H5N2003P - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
H5N2004DL - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
H5N2004DS - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)

Other Datasheets by Hitachi Semiconductor

Published: Aug 16, 2008 |