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HM628512BI - 4 M SRAM (512-kword x 8-bit)

Datasheet Summary

Description

The Hitachi HM628512BI is a 4-Mbit static RAM organized 512-kword × 8-bit.

HM628512BI Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process technology.

Features

  • Single 5 V supply.
  • Access time: 70/85 ns (max).
  • Power dissipation  Active: 50 mW/MHz (typ)  Standby: 10 µW (typ).
  • Completely static memory. No clock or timing strobe required.
  • Equal access and cycle times.
  • Common data input and output: Three state output.
  • Directly TTL compatible: All inputs and outputs.
  • Battery backup operation.
  • Operating temperature:.
  • 40 to +85˚C HM628512BI Series Ordering Information T.

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Datasheet Details

Part number HM628512BI
Manufacturer Hitachi Semiconductor
File Size 84.99 KB
Description 4 M SRAM (512-kword x 8-bit)
Datasheet download datasheet HM628512BI Datasheet
Additional preview pages of the HM628512BI datasheet.

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Full PDF Text Transcription

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HM628512BI Series 4 M SRAM (512-kword × 8-bit) ADE-203-935C (Z) Rev. 2.0 Aug. 24, 1999 Description The Hitachi HM628512BI is a 4-Mbit static RAM organized 512-kword × 8-bit. HM628512BI Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process technology. The HM628512BI Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It has packaged in 32-pin SOP, 32-pin TSOP II and 32-pin DIP. Features • Single 5 V supply • Access time: 70/85 ns (max) • Power dissipation  Active: 50 mW/MHz (typ)  Standby: 10 µW (typ) • Completely static memory.
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