K2225 - 2SK2225

Datasheet Summary

Features

High breakdown voltage (VDSS = 1500 V).
High speed switching.
Low drive current.
No Secondary Breakdown.
Suitable for Switching regulator, DC-DC converter Outline TO-3PFM ADE-208-140 1st. Edition D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK2225 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel tempera.

Hitachi Semiconductor

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Datasheet Details

Part number	K2225
Manufacturer	Hitachi Semiconductor
File Size	45.45 KB
Description	2SK2225
Datasheet	K2225 Datasheet
Additional preview pages of the K2225 datasheet.

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Full PDF Text Transcription

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2SK2225 Silicon N-Channel MOS FET Application High speed power switching Features • High breakdown voltage (VDSS = 1500 V) • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter Outline TO-3PFM ADE-208-140 1st. Edition D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK2225 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2.

Published: Jun 11, 2006 |