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K2247 - 2SK2247

Key Features

  • Low on-resistance.
  • High speed switching.
  • Low drive current.
  • 4 V gate drive device can be driven from 5 V source.
  • Suitable for DC-DC converter, motor drive, power switch, solenoid drive Outline UPAK G 21 3 4 D 1. Gate 2. Drain 3. Source 4. Drain S 2SK2247 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel d.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK2247 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source. • Suitable for DC-DC converter, motor drive, power switch, solenoid drive Outline UPAK G 21 3 4 D 1. Gate 2. Drain 3. Source 4. Drain S 2SK2247 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation VDSS VGSS ID I *1 D(pulse) I DR Pch*2 30 ±20 2 4 2 1 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes 1. PW ≤ 100 µs, duty cycle ≤ 10 % 2. When using the alumina ceramic board (12.5 × 20 × 0.7mm) 3.