H7N0307LD Datasheet, Mosfet, Hitachi

H7N0307LD Features

• Mosfet
• Low on-resistance RDS(on) =4.6 mΩ typ.
• Low drive current
• 4.5 V gate drive device can be driven from 5 V source Outline LDPAK D G S 4 44 1 2 3 1 2 3 H7N

PDF File Details

Part number:

H7N0307LD

Manufacturer:

Hitachi

File Size:

103.71kb

Download:

📄 Datasheet

Description:

Silicon n-channel mosfet.

TAGS

H7N0307LD

Hitachi

📁 Related Datasheet

H7N0307L - Silicon N-Channel MOSFET (Hitachi)
H7N0307LD, H7N0307LS, H7N0307LM Silicon N Channel MOS FET High Speed Power Switching ADE-208-1516D (Z) 5th. Edition May 2002 Features • Low on-resist.

H7N0307LD - Silicon N-Channel MOSFET (Renesas)
H7N0307LD, H7N0307LS, H7N0307LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1121-0700 (Previous: ADE-208-1516E) Rev.7.00 Apr 07, 2006.

H7N0307LM - Silicon N-Channel MOSFET (Renesas)
H7N0307LD, H7N0307LS, H7N0307LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1121-0700 (Previous: ADE-208-1516E) Rev.7.00 Apr 07, 2006.

H7N0307LM - Silicon N-Channel MOSFET (Hitachi)
H7N0307LD, H7N0307LS, H7N0307LM Silicon N Channel MOS FET High Speed Power Switching ADE-208-1516D (Z) 5th. Edition May 2002 Features • Low on-resis.

H7N0307LS - Silicon N-Channel MOSFET (Renesas)
H7N0307LD, H7N0307LS, H7N0307LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1121-0700 (Previous: ADE-208-1516E) Rev.7.00 Apr 07, 2006.

H7N0307LS - Silicon N-Channel MOSFET (Hitachi)
H7N0307LD, H7N0307LS, H7N0307LM Silicon N Channel MOS FET High Speed Power Switching ADE-208-1516D (Z) 5th. Edition May 2002 Features • Low on-resis.

H7N0307AB - Silicon N-Channel MOSFET (Hitachi)
H7N0307AB Silicon N Channel MOS FET High Speed Power Switching ADE-208-1568A (Z) 2nd. Edition Aug. 2002 Features • Low on-resistance • RDS(on) = 4.6 .

H7N0307AB - Silicon N-Channel MOSFET (Renesas)
H7N0307AB Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 4.6 mΩ typ. • Low drive current • 4.5 V gate d.

H7N0308AB - Silicon N-Channel MOSFET (Renesas Technology)
H7N0308AB Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 3.8 mΩ typ. • Low drive current • 4.5 V gate d.

H7N0308CF - Silicon N-Channel MOSFET (Renesas)
H7N0308CF Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 3.8 mΩ typ. • Low drive current • 4.5 V gate d.