H7N0307LM

Silicon N-Channel MOSFET

Renesas

H7N0307LM Features

* Low on-resistance RDS (on) = 4.6 mΩ typ.

* Low drive current

* 4.5 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 123 H7N0307LD RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 4

H7N0307LM Datasheet (87.60 KB)

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Datasheet Details

Part number:

H7N0307LM

Manufacturer:

Renesas ↗

File Size:

87.60 KB

Description:

Silicon n-channel mosfet.
H7N0307LD, H7N0307LS, H7N0307LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1121-0700 (Previous: ADE-208-1516E) Rev.7.00 Apr 07, 2006.

📁 Related Datasheet

H7N0307L - Silicon N-Channel MOSFET (Hitachi)
H7N0307LD, H7N0307LS, H7N0307LM Silicon N Channel MOS FET High Speed Power Switching ADE-208-1516D (Z) 5th. Edition May 2002 Features • Low on-resist.

H7N0307LD - Silicon N-Channel MOSFET (Renesas)
H7N0307LD, H7N0307LS, H7N0307LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1121-0700 (Previous: ADE-208-1516E) Rev.7.00 Apr 07, 2006.

H7N0307LD - Silicon N-Channel MOSFET (Hitachi)
H7N0307LD, H7N0307LS, H7N0307LM Silicon N Channel MOS FET High Speed Power Switching ADE-208-1516D (Z) 5th. Edition May 2002 Features • Low on-resis.

H7N0307LM - Silicon N-Channel MOSFET (Hitachi)
H7N0307LD, H7N0307LS, H7N0307LM Silicon N Channel MOS FET High Speed Power Switching ADE-208-1516D (Z) 5th. Edition May 2002 Features • Low on-resis.

H7N0307LS - Silicon N-Channel MOSFET (Renesas)
H7N0307LD, H7N0307LS, H7N0307LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1121-0700 (Previous: ADE-208-1516E) Rev.7.00 Apr 07, 2006.

H7N0307LS - Silicon N-Channel MOSFET (Hitachi)
H7N0307LD, H7N0307LS, H7N0307LM Silicon N Channel MOS FET High Speed Power Switching ADE-208-1516D (Z) 5th. Edition May 2002 Features • Low on-resis.

H7N0307AB - Silicon N-Channel MOSFET (Hitachi)
H7N0307AB Silicon N Channel MOS FET High Speed Power Switching ADE-208-1568A (Z) 2nd. Edition Aug. 2002 Features • Low on-resistance • RDS(on) = 4.6 .

H7N0307AB - Silicon N-Channel MOSFET (Renesas)
H7N0307AB Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 4.6 mΩ typ. • Low drive current • 4.5 V gate d.

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H7N0307LM Silicon N-Channel MOSFET Renesas

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H7N0307LM Features

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